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| Datasheet File OCR Text: |
| Central PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area TM PROCESS CPQ110 Triac Semiconductor Corp. 8.0 Amp, 600 Volt Triac Chip GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS 0.6 MILS 80 MILS x 35 MILS 37 MILS x 37 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CQ220-8B Series CQDD-8M Series BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (05-MAY 2005) |
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